Description
The BF9028DND-GE is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch.
Features
- z VDS=24 V z ID=6 A z Low on-state resistance
RDS (on) < 19.5 mΩ (VGS=4.5V) RDS (on) < 20 mΩ (VGS=3.8V) RDS (on) < 26 mΩ (VGS=3.0V) RDS (on) < 30 mΩ (VGS=2.5V)
Absolute Maximum Ratings(TC = 25℃)
Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage PD Power Dissipation TC = 25°C
TJ,Tstg Operating and Storage Temperature Range
(Note a)
Value 24 6 24 ±10 2.0
-55 to +150
Unit V A A V W ℃
Ordering Information
Part.
BF9028DND-GE-BYD.pdf
