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BF901 Datasheet

Silicon n-channel dual gate MOS-FETs

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DISCRETE SEMICONDUCTORS
DATA SHEET
BF901; BF901R
Silicon n-channel dual gate
MOS-FETs
Product specification
File under Discrete Semiconductors, SC07
November 1992


NXP Semiconductors Electronic Components Datasheet

BF901 Datasheet

Silicon n-channel dual gate MOS-FETs

No Preview Available !

Philips Semiconductors
Silicon n-channel dual gate MOS-FETs
Product specification
BF901; BF901R
FEATURES
Intended for low voltage operation
Short channel transistor with high
ratio Yfs :Cis
Low noise gain-controlled amplifier
to 1 GHz
BF901R has reverse pinning.
DESCRIPTION
Enhancement type field-effect
transistors in plastic microminiature
SOT143 and SOT143R envelopes,
with source and substrate
interconnected. They are intended for
UHF and VHF applications, such as
television tuners and professional
communications equipment
especially suited for low voltage
operation. These MOS-FET tetrodes
are protected against excessive input
voltage surges by integrated
back-to-back diodes between gates
and source.
PINNING
PIN DESCRIPTION
1 source
2 drain
3 gate 2
4 gate 1
QUICK REFERENCE DATA
SYMBOL
VDS
ID
Ptot
Tj
Yfs
Cig1-s
Crs
F
PARAMETER
drain-source voltage
drain current
total power dissipation
junction temperature
transfer admittance
input capacitance at gate 1
feedback capacitance
noise figure at 800 MHz
TYP.
28
2.35
25
1.7
MAX.
12
30
200
150
35
2.75
UNIT
V
mA
mW
°C
mS
pF
fF
dB
handbook, halfpage
4
3
d
g2
g1
1
Top view
2
MAM039
s,b
Marking code: MO1.
Fig.1 Simplified outline (SOT143) and symbol.
handbook, halfpag3e
4
d
g2
g1
2
Top view
1
MAM040
s,b
Marking code: MO2.
Fig.2 Simplified outline (SOT143R) and symbol.
November 1992
2


Part Number BF901
Description Silicon n-channel dual gate MOS-FETs
Maker NXP
Total Page 7 Pages
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