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BF90315SNS - N-Channel MOSFET

General Description

The BF90315SNS is a Single N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It is applied in the electronic systems as a power switch.

Key Features

  • z VDS=30 V z ID=11.6 A z Low on-state resistance RDS (on) < 15 mΩ (VGS=10V) RDS (on) < 22 mΩ (VGS=4.5V) Absolute Maximum Ratings(TC = 25℃) Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage PD Power Dissipation TC = 25°C TJ,Tstg Operating and Storage Temperature Range (Note a) Value 30 11.6 48 ±20 2 -55 to +150 Unit V A A V W ℃ Ordering Information Part Number BF90315SNS Package SOP8 Packaging Tape & Reel D.

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Datasheet Details

Part number BF90315SNS
Manufacturer BYD
File Size 175.64 KB
Description N-Channel MOSFET
Datasheet download datasheet BF90315SNS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BYD Microelectronics Co., Ltd. BF90315SNS 30V N-Channel MOSFET General Description The BF90315SNS is a Single N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is applied in the electronic systems as a power switch. Features z VDS=30 V z ID=11.6 A z Low on-state resistance RDS (on) < 15 mΩ (VGS=10V) RDS (on) < 22 mΩ (VGS=4.5V) Absolute Maximum Ratings(TC = 25℃) Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage PD Power Dissipation TC = 25°C TJ,Tstg Operating and Storage Temperature Range (Note a) Value 30 11.