BF904AWR Datasheet - NXP

N-channel dual gate MOS-FETs

BF904AWR Features

* Specially designed for use at 5 V supply voltage

* Short channel transistor with high transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz

* Superior cross-modulation performance during AGC. APPLICATIONS

* VHF and

BF904AWR General Description

Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, SOT143R and SOT34.

BF904AWR Datasheet (114.51 KB)

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Datasheet Details

Part number:

BF904AWR

Manufacturer:

NXP ↗

File Size:

114.51 KB

Description:

N-channel dual gate mos-fets.
DISCRETE SEMICONDUCTORS DATA SHEET BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Product speciﬁcation Supersedes data of 1999 Feb 01 1999 M.

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BF904AWR N-channel dual gate MOS-FETs NXP

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BF904AWR Features

BF904AWR General Description

Datasheet Details

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Description:

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