BF904 Datasheet | NXP Semiconductors

FEATURES - Specially designed for use at 5 V supply voltage - Short channel transistor with high transfer admittance to input capacitance ratio - Low noise gain controlled amplifier up to 1 GHz - Superior cross-modulation performance during AGC. APPLICATIONS - VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional munications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source BF904; BF904R and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION handbook, halfpage d 3 d handbook, halfpage 4 g2 g1 1 Top view g2 g1 2 s,b Top view MAM124 MAM125 - 1 s,b BF904 marking code: M04. BF904R marking code: M06. Fig.1 Simplified outline (SOT143B) and symbol. Fig.2 Simplified outline (SOT143R) and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj yfs Cig1-s Crs F 1999 May 17 drain current total power dissipation operating junction temperature forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure f = 1 MHz f = 800 MHz 2 PARAMETER drain-source voltage CONDITIONS - - - - 22 - - - MIN. - - - - 25 2.2 25 2 TYP. MAX. 7 30 200 150 30 2.6 35 - UNIT V m A m W °C m S p F f F d B Philips Semiconductors Product specification N-channel dual gate MOS-FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS ID IG1 IG2 Ptot PARAMETER drain-source voltage drain current gate 1 current gate 2 current total power dissipation BF904 BF904R Tstg Tj Note 1. Device...