* Specially designed for use at 5 V supply voltage
* Short channel transistor with high transfer admittance to input capacitance ratio
* Low noise gain controlled amplifier up to 1 GHz
* Superior cross-modulation performance during AGC. APPLICATIONS
* VHF and
BF904
111.30 KB
N-channel dual gate mos-fets.
DISCRETE SEMICONDUCTORS
DATA SHEET
BF904; BF904R N-channel dual gate MOS-FETs
Product specification Supersedes data of 1997 Sep 05 1999 May 17
Phili.
📁 Related Datasheet
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IEC 60127-6 250V 6,3A
Bezeichnung / Kennzeichnung
Bestellnummer MBL Isoliermaterial Kontakte Gewicht Nennstrom Nennspann.
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depletion-type n-channel H
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designed for • • •
Performance Curves MCB See Section 4
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DISCRETE SEMICONDUCTORS
DATA SHEET
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BYD Microelectronics Co., Ltd
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General Description
The BF9024SPD-M uses advanced trench technology to.
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The BF9028DND-A is a Dual N-Channel MOS Field Effect Transistor,.
BF9028DND-GE - N-Channel MOSFET
(BYD)
BYD Microelectronics Co., Ltd.
BF9028DND-GE
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General Description
The BF9028DND-GE is a dual N-channel MOS Field Effect Transisto.
BF9028DNT - N-Channel MOSFET
(BYD)
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BF9028DNT
20V N-Channel MOSFET
85
General Description
The BF9028DNT is a dual N-channel MOS Field Effect Transistor, .
