MOS-FETs Datasheet | Specifications & PDF Download

CMP3803/CMB3803/CMI3803 General Description The 3803 is N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge fo

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N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailore

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QM3006M3 General Description The QM3006M3 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS

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30V P-Channel MOSFETs PDS3807 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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QM6015D P-Ch 60V Fast Switching MOSFETs General Description The QM6015D is the highest performance trench P-ch MOSFETs with extreme high cell density

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100V N-Channel MOSFETs PDD0958A General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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CMP100N03/CMB100N03/CMI100N03 N-Ch 30V Fast Switching MOSFETs General Description The100N03 is N-ch MOSFETs with extreme high cell density , which pr

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TPC8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPC8046-H Switching Regulator Applications Motor Drive Applications D

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RFP70N03, RF1S70N03, RF1S70N03SM Data Sheet January 2002 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufacture

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QM8014U N-Ch 80V Fast Switching MOSFETs General Description The QM8014U is the highest performance trench N-ch MOSFETs with extreme high cell density

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JXND ELECTRONICS CO.,LTD SOT-23 Plastic Encapsulate MOSFETS AO3400 30V N-Channel Enhancement Mode Field Effect Transistor V(BR)DSS 30 V RDS(on)Typ

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Semiconductor July 1998 IRF140, IRF141, IRF142, IRF143 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Features • 28A and 25

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100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adv

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60V N-Channel MOSFETs PDP6906 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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40V N+P Dual Channel MOSFETs PDS4701 General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMO

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30V N-Channel MOSFETs PDC3803R General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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ADVANCE TECHNICAL INFORMATION HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt IXFH 60N20 IXFT 60N20 VDSS = 200 V =

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TPC8055-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8055-H 1. Applications • • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2.

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