MOS-FETs Datasheet | Specifications & PDF Download

30V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adva

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PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-w

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(t) §upertex inc. VN01 04N6 / VN0104N7 VN01 06N6 / VN0106N7 Ordering Information BVoss I BVDGS 40V SOV '14-pin Side Brazed Ceramic Dip. N-Channel En

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TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS D Low rDS(on) . . . 0.18 Ω at VGS = – 10 V D 3-V Compatible D Requires No External VCC D TT

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Elektronische Bauelemente S2N7002T-C 115mA, 60V, RDS(ON) 7.5Ω N-Channel Plastic-Encapsulate MOSFETS FEATURES  Low On-Resistance  Low Gate Threshol

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IRFZ44/45/40/42 N-CHANNEL POWER MOSFETS FEATURES Lower RDS(ON) Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell struct

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100V N-Channel MOSFETs PDD0958A General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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FDC6333C October 2001 FDC6333C 30V N & P-Channel PowerTrench® MOSFETs General Description These N & P-Channel MOSFETs are produced using Fairchild S

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TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V (D-S) MOSFETs PRODUCT SUMMARY Part Number TN0601L VN0606L VN66AFD 60 V(BR)DSS Min (V) rDS

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www

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www.DataSheet4U.com OM60N06SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

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STF13NK50Z STP13NK50Z, STW13NK50Z N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET Features Type STF1

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STB8N65M5, STD8N65M5, STF8N65M5, STI8N65M5, STP8N65M5, STU8N65M5 N-channel 650 V, 0.56 Ω typ., 7 A MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220, TO-

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General Description The QM3004M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gat

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CMD06N02N /CMU06N02N N-Ch 20V Fast Switching MOSFETs General Description Product Summery The 06N02 is N-channel MOSFET device that features a low

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FDMS1D2N03DSD POWERTRENCH) Power Clip 30 V Asymmetric Dual N‐Channel MOSFETs General Description This device includes two specialized N-Channel MOSFET

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FSS913A0D, FSS913A0R Data Sheet June 1999 File Number 4451.3 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The D

Rating: 1 ★ (5 votes)

DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 1995 Apr 25 Phi

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DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 1997

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DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 1999 Dec 01 2

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