Part number:
PDEU2320X
Manufacturer:
Potens semiconductor
File Size:
527.79 KB
Description:
N-channel mosfets.
PDEU2320X-Potenssemiconductor.pdf
Datasheet Details
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
PDEU2320X Features
* 20V,800mA, RDS(ON) =300mΩ@VGS = 4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for 1.5V Gate Drive Applications Applications
* Notebook
* Load Switch
* Battery Protection
* Hand-held Instruments Absolute Maximum Ratings Tc=25℃
PDEU2320X-Potenssemiconductor.pdf
Datasheet Details
PDEU2320X
Potens semiconductor
527.79 KB
N-channel mosfets.
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