PDEU2319X - P-Channel MOSFETs
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
PDEU2319X Features
* -20V,-400mA, RDS(ON) =650mΩ@VGS = -4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for -1.5V Gate Drive Applications Applications
* Notebook
* Load Switch
* Battery Protection
* Hand-held Instruments Absolute Maximum Ratings Tc
