PDEU2320W
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
Key Features
- 20V,500mA, RDS(ON) =350mΩ@VGS = 4.5V
- Fast switching
- Green Device Available
- Suit for 1.2V Gate Drive Applications
- 2KV HBM ESD Capability
