PDEU2320W - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

20V,500mA, RDS(ON) =350mΩ@VGS = 4.5V.
Worldwide Smallest Package : 1x0.6x0.45 mm.
Fast switching.
Green Device Available.
Suit for 1.2V Gate Drive.

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PDEU2320W n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDEU2320W
Manufacturer	Potens semiconductor
File Size	418.08 KB
Description	N-Channel MOSFETs
Datasheet	PDEU2320W Datasheet

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20V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT883 Pin Configuration D S G D S G S PDEU2320W BVDSS 20V RDSON 350m ID 500mA Features  20V,500mA, RDS(ON) =350mΩ@VGS = 4.5V  Worldwide Smallest Package : 1x0.6x0.45 mm  Fast switching  Green Device Available  Suit for 1.