Part number:
PDEU2320W
Manufacturer:
Potens semiconductor
File Size:
418.08 KB
Description:
N-channel mosfets.
PDEU2320W-Potenssemiconductor.pdf
Datasheet Details
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
PDEU2320W Features
* 20V,500mA, RDS(ON) =350mΩ@VGS = 4.5V
* Worldwide Smallest Package : 1x0.6x0.45 mm
* Fast switching
* Green Device Available
* Suit for 1.2V Gate Drive Applications
* 2KV HBM ESD Capability Applications
* Notebook
* Smartphone
* Battery Protection
* Hand-held
PDEU2320W-Potenssemiconductor.pdf
Datasheet Details
PDEU2320W
Potens semiconductor
418.08 KB
N-channel mosfets.
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