PDEU2319Y

P-Channel MOSFETs

Potens semiconductor

PDEU2319Y Features

* -20V,-400mA, RDS(ON) =600mΩ@VGS = -4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for -1.5V Gate Drive Applications Applications

* Notebook

* Load Switch

* Battery Protection

* Hand-held Instruments Absolute Maximum Ratings Tc

PDEU2319Y General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDEU2319Y Datasheet (667.58 KB)

PDEU2319Y Datasheet Preview — Preview of PDEU2319Y PDF

Datasheet Details

Part number:

PDEU2319Y

Manufacturer:

Potens semiconductor

File Size:

667.58 KB

Description:

P-channel mosfets.

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PDEU2319Y P-Channel MOSFETs Potens semiconductor

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PDEU2319Y Features

PDEU2319Y General Description

Datasheet Details

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