PDEU2320Y Datasheet (Potens semiconductor)

PDEU2320Y, N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDEU2320Y Features

* 20V,800mA, RDS(ON) =300mΩ@VGS = 4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for 1.5V Gate Drive Applications Applications

* Notebook

* Load Switch

* Battery Protection

* Hand-held Instruments Absolute Maximum Ratings Tc=25℃