IXFH60N20, IXFT60N20 Datasheet - IXYS Corporation

IXFH60N20 HiPerFET Power MOSFETs

ADVANCE TECHNICAL INFORMATION HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt IXFH 60N20 IXFT 60N20 VDSS = 200 V = 60 A ID25 RDS(on) = 33 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, R.

IXFH60N20 Features

* l l l l International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 4.0 ± 100 TJ = 25°C TJ =

IXFT60N20_IXYSCorporation.pdf

IXFH60N20 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFH60N20, IXFT60N20. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXFH60N20, IXFT60N20

Manufacturer:

IXYS Corporation

File Size:

112.24 KB

Description:

Hiperfet power mosfets.

Note:

This datasheet PDF includes multiple part numbers: IXFH60N20, IXFT60N20.
Please refer to the document for exact specifications by model.

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IXFH60N20 IXFT60N20 HiPerFET Power MOSFETs IXYS Corporation

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