* z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-264 300 1.13/10 Nm/lb.in. 6 10 g g z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Symbol Test Conditions (TJ = 25°C, unl
IXFH69N30P Datasheet (627.44 KB)
IXFH69N30P
IXYS
627.44 KB
Polarht hiperfet power mosfet.
PolarHT HiPerFET Power MOSFET
TM
IXFH69N30P IXFK69N30P
N-Channel Enhancement Mode Fast Intrinsic Diode
RDS(on) trr
VDSS ID25
= 300 V = 69 A = 49 .
📁 Related Datasheet
IXFH60N20 HiPerFET Power MOSFETs (IXYS Corporation)
IXFH60N20F HiPerRFTM Power MOSFETs (IXYS Corporation)
IXFH60N25Q Power MOSFET (IXYS Corporation)
IXFH60N50P3 Polar3 HiperFET Power MOSFET (IXYS Corporation)
IXFH60N60X Power MOSFET (IXYS)
IXFH60N60X N-Channel MOSFET (INCHANGE)
IXFH60N65X2 Power MOSFET (IXYS)
IXFH60N65X2 N-Channel MOSFET (INCHANGE)
IXFH66N20Q Power MOSFET (IXYS Corporation)
IXFH67N10 Power MOSFET (IXYS Corporation)
