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IXFH6N100F - Power MOSFETs

IXYS Corporation

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Datasheet Details

Part number	IXFH6N100F
Manufacturer	IXYS Corporation
File Size	820.75 KB
Description	Power MOSFETs
Datasheet	IXFH6N100F_IXYSCorporation.pdf

IXFH6N100F Product details

Features

RF capable MOSFETs.
Double metal process for low gate resistance.
Rugged polysilicon gate cell structure.
Unclamped Inductive Switching (UIS) rated.
Low package inductance - easy to drive and to protect.
Fast intrinsic rectifier.

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Published: Apr 16, 2005 |