* RF capable MOSFETs
* Double metal process for low gate resistance
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic rectifier Applications DC-DC converters
* Swit
IXFH6N100F Datasheet (820.75 KB)
IXFH6N100F
IXYS Corporation
820.75 KB
Power mosfets.
Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 6N100F VDSS .
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