Part number:
IXFH6N100F
Manufacturer:
IXYS Corporation
File Size:
820.75 KB
Description:
Power mosfets.
IXFH6N100F_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFH6N100F
Manufacturer:
IXYS Corporation
File Size:
820.75 KB
Description:
Power mosfets.
IXFH6N100F, Power MOSFETs
Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 6N100F VDSS IXFT 6N100F ID25 RDS(on) = 1000 V = 6A = 1.9 Ω trr ≤ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-247 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse
IXFH6N100F Features
* RF capable MOSFETs
* Double metal process for low gate resistance
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic rectifier Applications DC-DC converters
* Swit
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