IXFH60N20F Datasheet - IXYS Corporation

IXFH60N20F HiPerRFTM Power MOSFETs

Advance Technical Information www.DataSheet4U.com HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 60N20F IXFT 60N20F VDSS ID25 RDS(on) = = = 200V 60A 38mΩ trr ≤ 200 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-247 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C.

IXFH60N20F Features

* l l l 1.13/10 Nm/lb.in. 6 4 g g l l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unl

IXFH60N20F_IXYSCorporation.pdf