* l l l 1.13/10 Nm/lb.in. 6 4 g g l l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unl
IXFH60N20F Datasheet (124.97 KB)
IXFH60N20F
IXYS Corporation
124.97 KB
Hiperrftm power mosfets.
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HiPerRFTM Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode Avalanche Rated, Lo.
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