IXFH60N20F Datasheet, Mosfets, IXYS Corporation

IXFH60N20F Features

• Mosfets l l l 1.13/10 Nm/lb.in. 6 4 g g l l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive

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Part number:

IXFH60N20F

Manufacturer:

IXYS Corporation

File Size:

124.97kb

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📄 Datasheet

Description:

Hiperrftm power mosfets.

IXFH60N20F Application

• Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 V 4.0 V ±100 nA TJ = 125°C

TAGS

IXFH60N20F

IXYS Corporation

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