* z z z 1.13/10 Nm/lb.in. 6 4 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 200 2.0 4.0 ±100 25 1 40
IXFH66N20Q Datasheet (157.19 KB)
IXFH66N20Q
IXYS Corporation
157.19 KB
Power mosfet.
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg
Preliminary data sheet
IXFH 66N20Q IXFT 66N20Q
VDSS I.
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