IXFH60N65X2 - Power MOSFET
X2-Class HiPerFETTM Power MOSFET IXFH60N65X2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = RDS(on) 650V 60A 52m TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) fro
IXFH60N65X2 Features
* International Standard Package
* Low RDS(ON) and QG
* Avalanche Rated
* Low Package Inductance Advantages
* High Power Density
* Easy to Mount
* Space Savings Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VG
