IXFH60N65X2 Datasheet - IXYS

IXFH60N65X2 Power MOSFET

X2-Class HiPerFETTM Power MOSFET IXFH60N65X2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = RDS(on) 650V 60A 52m TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) fro.

IXFH60N65X2 Features

* International Standard Package

* Low RDS(ON) and QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VG

IXFH60N65X2-IXYS.pdf

IXFH60N65X2 Datasheet Preview — Preview of IXFH60N65X2 PDF

Datasheet Details

Part number:

IXFH60N65X2

Manufacturer:

IXYS

File Size:

150.97 KB

Description:

Power mosfet.

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IXFH60N65X2 IXFH60N65X2 Power MOSFET IXYS

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