Datasheet Specifications
- Part number
- IXFH67N10
- Manufacturer
- IXYS Corporation
- File Size
- 94.18 KB
- Datasheet
- IXFH67N10_IXYSCorporation.pdf
- Description
- Power MOSFET
Description
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100 V 100 V ID25 RDS.
Features
* International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier q q q q q q Symbol Test Conditions Characteristic Values (TJ = 25°C, unlessApplications
* DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays q q q q q q q q 67N10 75N10 Pulse test, t £ 300 ms, duty cycle d £ 2 % Advantages Easy to mount with 1 screwIXFH67N10 Distributors
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