Datasheet4U Logo Datasheet4U.com

IXFH67N10 Datasheet - IXYS Corporation

Datasheet Details

Part number:

IXFH67N10

Manufacturer:

IXYS Corporation

File Size:

94.18 KB

Description:

Power MOSFET

Features

* International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier q q q q q q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless

IXFH67N10_IXYSCorporation.pdf

Preview of IXFH67N10 PDF
IXFH67N10 Datasheet Preview Page 2 IXFH67N10 Datasheet Preview Page 3

IXFH67N10, Power MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100 V 100 V ID25 RDS(on) 67 A 25 mW 75 A 20 mW trr £ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 67N

IXFH67N10 Distributor

📁 Related Datasheet

📌 All Tags

IXYS Corporation IXFH67N10-like datasheet