Datasheet Details
Part number:
IXFH67N10
Manufacturer:
IXYS Corporation
File Size:
94.18 KB
Description:
Power MOSFET
Features
* International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier q q q q q q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless