* International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier q q q q q q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless
IXFH67N10 Datasheet (94.18 KB)
IXFH67N10
IXYS Corporation
94.18 KB
Power mosfet.
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100 V 100 V
ID25
RDS.
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