Description
www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) IXFH/IXFT 68N20 IXF.
Features
* International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Low
rated package inductance - easy to drive and to protect Fast intrinsic Rectifier
1.6 mm (0.062 in. ) from case for 10 s Mount
Applications
* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 4 ± 100 TJ = 25°C TJ = 125°C 200 1 30 35 V V nA mA mA mW mW DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor contro