IXFH6N120P - N-Channel MOSFET Transistor

Inchange Semiconductor

IXFH6N120P Datasheet Preview — Preview of IXFH6N120P PDF

Datasheet Details

Part number	IXFH6N120P
Manufacturer	Inchange Semiconductor
File Size	345.46 KB
Description	N-Channel MOSFET Transistor
Datasheet	IXFH6N120P-InchangeSemiconductor.pdf

IXFH6N120P Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 6.0 A IDM Drain Current-Single Pluse 18 A PD Total Dissipation @TC=25℃ 250 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Jun

Features

Drain Current : ID= 6.0A@ TC=25℃.
Drain Source Voltage : VDSS= 1200V(Min).
Static Drain-Source On-Resistance : RDS(on) = 2.75Ω(Max) @ VGS= 10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Aug 7, 2022 |