Part number:
IXFY26N30X3
Manufacturer:
Inchange Semiconductor
File Size:
286.29 KB
Description:
N-channel mosfet transistor.
* Drain Current : ID= 26A@ TC=25℃
* Drain Source Voltage : VDSS= 300V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 66mΩ(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
* motor drive, DC-DC conver
IXFY26N30X3 Datasheet (286.29 KB)
IXFY26N30X3
Inchange Semiconductor
286.29 KB
N-channel mosfet transistor.
📁 Related Datasheet
IXFY26N30X3 - Power MOSFET
(IXYS)
X3-Class HiPERFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXFY26N30X3 IXFA26N30X3 IXFP26N30X3
D
G
S
Symbol
VDSS VDGR VGSS VGSM ID2.
IXFY36N20X3 - Power MOSFET
(IXYS)
X3-Class HiPERFETTM Power MOSFET
N-Channel Enhancement Mode
IXFY36N20X3 IXFA36N20X3 IXFP36N20X3
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD .
IXFY36N20X3 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanch.
IXFY4N85X - Power MOSFET
(IXYS)
X-Class HiPERFET Power MOSFET
N-Channel Enhancement Mode
IXFY4N85X IXFA4N85X IXFP4N85X
D
G
S
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ .
IXFY8N65X2 - Power MOSFET
(IXYS)
X2-Class HiPERFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXFY8N65X2 IXFA8N65X2 IXFP8N65X2
D
G S
Symbol VDSS VDGR VGSS VGSM ID25 IDM.
IXFY8N65X2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static drain-source on-resistance:
RDS(on) ≤ 450mΩ@VGS=10V ·Fully.
IXF18102 - 10Gbps Physical Layer Device
(Intel Corporation)
product brief
Intel IXF18102
®
10Gbps Physical Layer Device for STS-192c/STM 64c POS/GFP
..
Product Description The Intel® IXF1810.
IXF18104 - 10 Gigabit Lan PHY
(Intel Corporation)
product brief
Intel IXF18104
®
10 Gigabit LAN PHY
..
Product Overview The Intel® IXF18104 is a highly integrated solution for 10Gb.