IXFY26N30X3 - N-Channel MOSFET Transistor

Inchange Semiconductor

IXFY26N30X3 Datasheet Preview — Preview of IXFY26N30X3 PDF

Datasheet Details

Part number	IXFY26N30X3
Manufacturer	Inchange Semiconductor
File Size	286.29 KB
Description	N-Channel MOSFET Transistor
Datasheet	IXFY26N30X3-InchangeSemiconductor.pdf

IXFY26N30X3 Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 300 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 26 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 170 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junct

Features

Drain Current : ID= 26A@ TC=25℃.
Drain Source Voltage : VDSS= 300V(Min).
Static Drain-Source On-Resistance : RDS(on) = 66mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Jun 30, 2022 |