IXFH170N10P - N-Channel MOSFET Transistor

Inchange Semiconductor

IXFH170N10P Datasheet Preview — Preview of IXFH170N10P PDF

Datasheet Details

Part number	IXFH170N10P
Manufacturer	Inchange Semiconductor
File Size	330.61 KB
Description	N-Channel MOSFET Transistor
Datasheet	IXFH170N10P-InchangeSemiconductor.pdf

IXFH170N10P Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 170 A IDM Drain Current-Single Pluse 350 A PD Total Dissipation @TC=25℃ 300 W TJ Max.Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Jun

Features

Drain Current : ID= 170A@ TC=25℃.
Drain Source Voltage : VDSS= 100V(Min).
Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Jun 30, 2022 |