* z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 800 2.0 4.5 ±100 25 1 0.60 V V nA µA mA Ω z z z IXY
IXFH17N80Q Datasheet (582.17 KB)
IXFH17N80Q
IXYS
582.17 KB
Hiperfet power mosfet.
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 17N80Q IXFT 17N80Q VDSS ID25 RDS(on) = 800 V =.
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