PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH170N10P IXFK170N10P VDSS = ID25 = RDS(on) ≤ trr ≤ 100V 170A 9mΩ 150ns TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 17
Datasheet Details
Part number:
IXFH170N10P, IXFK170N10P
Manufacturer:
IXYS
File Size:
142.63 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFH170N10P, IXFK170N10P.
Please refer to the document for exact specifications by model.