IXFH170N10P Datasheet - IXYS

IXFH170N10P Power MOSFET

PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH170N10P IXFK170N10P VDSS = ID25 = RDS(on) ≤ trr ≤ 100V 170A 9mΩ 150ns TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 17.

IXFH170N10P Features

* z International Standard Packages z Fast Intrinsic Rectifier z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Applications z Switch-Mode and Resonant-Mode Power Supplies z DC-DC Converters z Laser Drivers z AC and DC Moto

IXFH170N10P Datasheet (142.63 KB)