Description
The BF9028DND-A is a Dual N-Channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch.
Features
- z VDS = 20V z ID =6A z Low on-state resistance z RDS(on) = 16.0mΩ TYP(VGS = 4.5V, ID = 3.0A) z RDS(on) = 17.5mΩ TYP(VGS = 3.8V, ID = 3.0A) z RDS(on) = 20.0mΩ TYP(VGS = 3.0V, ID = 3.0A) z RDS(on) = 23.0mΩ TYP(VGS = 2.5V, ID = 3.0A) z Built-in G-S protection diode against ESD z Lead Pb-free and Halogen-free
1 23 4 S1 G1 S2 G2
Absolute Maximum Ratings (Ta=25OC)
Parameter
Symbol Ratings Unit
Drain to Source Voltage
VDS
20 V
Gate to Source Voltage
VGS
±10 V
Drain Current (DC) Drain Cur.
BF9028DND-A-BYD.pdf
