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BF904WR Datasheet - NXP

N-channel dual-gate MOS-FET

BF904WR Features

* Specially designed for use at 5 V supply voltage

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz

* Superior cross-modulation performance during AGC. APPLICATIONS

BF904WR General Description

Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION Marking code: MC. handbook, half.

BF904WR Datasheet (119.78 KB)

Preview of BF904WR PDF

Datasheet Details

Part number:

BF904WR

Manufacturer:

NXP ↗

File Size:

119.78 KB

Description:

N-channel dual-gate mos-fet.
DISCRETE SEMICONDUCTORS DATA SHEET BF904WR N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 1995 Apr 25 Ph.

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BF904WR N-channel dual-gate MOS-FET NXP

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