BF909WR Datasheet - NXP

N-channel dual-gate MOS-FET

BF909WR Features

* Specially designed for use at 5 V supply voltage

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz

* Superior cross-modulation performance during AGC. PINNING PIN 1 2 3 4 SYMBOL DESCRIPTI

BF909WR General Description

s, b source d drain g2 gate 2 g1 gate 1 APPLICATIONS * VHF and UHF applications with 3 to 7 V supply voltage handbook, halfpage d such as television tuners and professional communications equipment. 3 4 DESCRIPTION Enhancement type field-effect transistor in a plastic microminiatu.

BF909WR Datasheet (180.38 KB)

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Part number:

BF909WR

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NXP ↗

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180.38 KB

Description:

N-channel dual-gate mos-fet.
DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1997 Sep 05 2010 Sep 15 NXP Semico.

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BF909WR N-channel dual-gate MOS-FET NXP

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BF909WR Features

BF909WR General Description

Datasheet Details

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