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BFG31 Datasheet

PNP 5 GHz wideband transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG31
PNP 5 GHz wideband transistor
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
1995 Sep 12


NXP Semiconductors Electronic Components Datasheet

BFG31 Datasheet

PNP 5 GHz wideband transistor

No Preview Available !

Philips Semiconductors
PNP 5 GHz wideband transistor
Product specification
BFG31
FEATURES
High output voltage capability
High gain bandwidth product
Good thermal stability
Gold metallization ensures
excellent reliability.
DESCRIPTION
PNP planar epitaxial transistor
mounted in a plastic SOT223
envelope.
It is intended for wideband amplifier
applications.
NPN complement is the BFG97.
PINNING
PIN
1
2
3
4
DESCRIPTION
emitter
base
emitter
collector
QUICK REFERENCE DATA
SYMBOL
VCEO
IC
Ptot
hFE
PARAMETER
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
fT transition frequency
GUM
Vo
maximum unilateral power
gain
output voltage
CONDITIONS
open base
up to Ts = 135 °C ; note 1
IC = 70 mA; VCE = 10 V;
Tamb = 25 °C
IC = 70 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
IC = 70 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 °C
IC = 100 mA; VCE = 10 V;
RL = 75 ; Tamb = 25 °C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to Ts = 135 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
1995 Sep 12
2
page 4
1
Top view
23
MSB002 - 1
Fig.1 SOT223.
MIN.
25
TYP.
MAX.
15
100
1
UNIT
V
mA
W
5.0 GHz
12 dB
600 mV
MIN.
65
MAX.
20
15
3
100
1
150
175
UNIT
V
V
V
mA
W
°C
°C


Part Number BFG31
Description PNP 5 GHz wideband transistor
Maker NXP
Total Page 7 Pages
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