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BFG10 NPN 2 GHz RF power transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product speciļ¬cation Supersedes data of 1995 Mar 07 File under Discr.
NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package.

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Features

* High power gain
* High efficiency
* Small size discrete power amplifier
* 1.9 GHz operating area

BFG10 Distributors

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NPN GHz power transistor NXP
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