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Siemens Electronic Components Datasheet

BFG194 Datasheet

PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)

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BFG194 pdf
PNP Silicon RF Transistor
• For low distortion broadband amplifiers in
antenna and telecommunications systems up
to 1.5 GHz at collector currents from 20mA
to 80mA
BFG 194
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFG 194 BFG194 Q62702-F1321
1=E 2=B 3=E 4=C
Package
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 75 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
15
20
3
100
10
1000
150
- 65 ... + 150
- 65 ... + 150
75
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Aug-22-1996



Siemens Electronic Components Datasheet

BFG194 Datasheet

PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)

No Preview Available !

BFG194 pdf
BFG 194
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 70 mA, VCE = 8 V
V(BR)CEO
15
ICBO
-
IEBO
-
hFE
15
-
-
-
50
max.
-
100
1
-
Unit
V
nA
µA
-
Semiconductor Group
2
Aug-22-1996


Part Number BFG194
Description PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)
Maker Siemens Semiconductor Group
Total Page 7 Pages
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