BFG193
DESCRIPTION
- Low Noise Figure
NF = 1.3 d B TYP. @VCE = 8 V, IC = 10 m A, f = 900 MHz
- High Gain
︱S21e︱2 = 13.5 d B TYP. @VCE= 8 V,IC = 30 m A,f = 900 MHz
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCES Collector-Emitter Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Collector Current-Continuous
80 m A
Base Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
10 m A
℃
Tstg
Storage Temperature Range
-65~150
℃
BFG193 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER...
