BFG198
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
BVCBO
20
V
Collector-Emitter Voltage
BVCEO
10
V
Emitter-Base Voltage
BVEBO
2.5
V
Collector Current
Power Dissipation
IC 100 mA
PD 1 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
Collector Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain
Collector Capacitance
Emitter Capacitance
Feedback Capacitance
Transition Frequency
SYMBOL
ICBO
ICEO
IEBO
hFE
Cc
Ce
Cre
fT
TEST CONDITIONS
VCB=5V, IE=0
VCE=10V, IB=0
VEB=2.5V, IE=0
VCE=5V, IC=50mA
IE=ie=0, VCB=8V, f=1MHz
IC=iC=0, VEB=0.5V, f=1MHz
IC=0, VEB=8V, f=1MHz
VCE=8V, IC=50mA, f=1.0GHz,
TA=25°C
MIN TYP MAX UNIT
100 nA
10 µA
1 µA
40
1.5 pF
4 pF
0.8 pF
8 GHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R221-042.a
