BFG11W Datasheet - NXP

NPN 2 GHz power transistor

BFG11W Features

* High power gain

* High efficiency

* Small size discrete power amplifier

* 1.9 GHz operating area

* Gold metallization ensures excellent reliability

* Linear and non-linear operation. APPLICATIONS

* Common emitter class-AB operation in handhel

BFG11W General Description

NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package. Marking code: S4 1 Top view 2 handbook, halfpage BFG11W/X PINNING - SOT343 PIN 1 2 3 4 collector emitter base emitter DESCRIPTION 4 3 MBK523 Fig.1 Simplified outline. QUICK REFERENCE DATA RF pe.

BFG11W Datasheet (98.04 KB)

BFG11W Datasheet Preview — Preview of BFG11W PDF

Datasheet Details

Part number:

BFG11W

Manufacturer:

NXP ↗

File Size:

98.04 KB

Description:

Npn 2 ghz power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product speciﬁcation Supersedes data of September 1995 File under Discrete Se.

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BFG11W NPN GHz power transistor NXP

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BFG11W Features

BFG11W General Description

Datasheet Details

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