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BFG11W NPN 2 GHz power transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product speciļ¬cation Supersedes data of September 1995 File under Discrete Se.
NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package.

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Features

* High power gain
* High efficiency
* Small size discrete power amplifier
* 1.9 GHz operating area
* Gold metallization ensures excellent reliability

Applications

* Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS.

BFG11W Distributors

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NPN GHz power transistor NXP
NXP BFG11W-like datasheet