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BFQ136 - NPN 4 GHz wideband transistor

Datasheet Summary

Description

NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap.

All leads are isolated from the stud.

Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties.

Features

  • extremely high output voltage capabilities. It is primarily intended for final stages in UHF amplifiers.

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Datasheet Details

Part number BFQ136
Manufacturer NXP
File Size 73.48 KB
Description NPN 4 GHz wideband transistor
Datasheet download datasheet BFQ136 Datasheet
Additional preview pages of the BFQ136 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BFQ136 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. It features extremely high output voltage capabilities. It is primarily intended for final stages in UHF amplifiers. PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter page BFQ136 4 1 3 2 Top view MBK187 Fig.1 SOT122A.
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