BFQ19 Datasheet | NXP Semiconductors

DESCRIPTION NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is primarily intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers etc. The transistor features very low intermodulation distortion and high power gain. Due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PINNING PIN DESCRIPTION Code: FB 1 emitter 2 collector 3 base Fig.1 SOT89. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC Ptot f T collector-emitter voltage DC collector current total power dissipation transition frequency Cre feedback capacitance F noise figure CONDITIONS TYP. open base - up to Ts = 145 °C (note 1) Ic = 50 m A; VCE = 10 V; f = 500 MHz; Tj = 25 °C Ic = 10 m A; VCE = 10 V; f = 1 MHz; Tamb = 25 °C Ic = 50 m A; VCE = 10 V; Zs = opt.; f = 500 MHz; Tamb = 25 °C - - 5.5 MAX. 15 100 1 - - - UNIT V m A W GHz p F d B LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature CONDITIONS open emitter open base open collector f > 1 MHz up to Ts = 145 °C (note 1) Note 1. Ts is the temperature at the soldering point of the collector tab. MIN. - - - - - - - 65 - MAX. UNIT 20 V 15 V 3.3 V 100 m A 150 m A 1W 150 °C 175...