BFR54
Key Features
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability. DESCRIPTION The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 70 °C; note 1 IC = 40 mA; VCE = 8 V IC = ic = 0; VCB = 8 V; f = 1 MHz IC = 40 mA; VCE = 8 V; f = 1 GHz IC = 40 mA; VCE = 8 V; Tamb = 25 °C; f = 900 MHz IC = 40 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz S212 F insertion power gain noise figure IC = 40 mA; VCE = 8 V; Tamb = 25 °C; f = 900 MHz Γs = Γopt; IC = 10 mA; VCE = 8 V; Tamb = 25 °C; f = 900 MHz Γs = Γopt; IC = 40 mA; VCE = 8 V; Tamb = 25 °C; f = 900 MHz Γs = Γopt; IC = 10 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz Note
- Ts is the temperature at the soldering point of the collector tab. open emitter RBE = 0 CONDITIONS MIN. - - - - 60 - - - - 12 - - - TYP. - - - - 120 0.6 9 14 7 13 1.3 1.9 2.1 The transistor is encapsulated in a plastic SOT23 envelope. PINNING fpage BFR540 3
