BFU530XR Key Features
- Low noise, high breakdown RF transistor
- AEC-Q101 qualified
- Minimum noise figure (NFmin) = 0.65 dB at 900 MHz
- Maximum stable gain 21 dB at 900 MHz
- 11 GHz fT silicon technology
| Part Number | Description |
|---|---|
| BFU530X | NPN wideband silicon RF transistor |
| BFU530 | NPN wideband silicon RF transistor |
| BFU530A | NPN wideband silicon RF transistor |
| BFU530W | NPN wideband silicon RF transistor |
| BFU510 | NPN SiGe wideband transistor |