BFU550W Key Features
- Low noise, high breakdown RF transistor
- AEC-Q101 qualified
- Minimum noise figure (NFmin) = 0.6 dB at 900 MHz
- Maximum stable gain 18 dB at 900 MHz
- 11 GHz fT silicon technology
- Part: BFU550W
- Description: NPN wideband silicon RF transistor
- Manufacturer: NXP Semiconductors
- Size: 296.66 KB
Related NXP Semiconductors Datasheets
| Part Number | Description |
|---|---|
| BFU550 | NPN wideband silicon RF transistor |
| BFU550A | NPN wideband silicon RF transistor |
| BFU550X | NPN wideband silicon RF transistor |
| BFU550XR | NPN wideband silicon RF transistor |
| BFU510 | NPN SiGe wideband transistor |