BFU725F-N1 Datasheet | NXP Semiconductors

BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 - 3 November 2011 Product data sheet 1. Product profile CAUTION 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to Electro Static Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits - Low noise high gain microwave transistor - Noise figure (NF) = 0.7 d B at 5.8 GHz - High maximum stable gain 27 d B at 1.8 GHz - 110 GHz f T silicon germanium technology 1.3 Applications - 2nd LNA stage and mixer stage in DBS LNB’s - Satellite radio - Low noise amplifiers for microwave munications systems - WLAN and CDMA applications - Analog/digital cordless applications - Ka band oscillators (DRO’s) 1.4 Quick...