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BFU725F-N1

Manufacturer: NXP Semiconductors
BFU725F-N1 datasheet preview

Datasheet Details

Part number BFU725F-N1
Datasheet BFU725F-N1-NXP.pdf
File Size 101.08 KB
Manufacturer NXP Semiconductors
Description NPN wideband silicon germanium RF transistor
BFU725F-N1 page 2 BFU725F-N1 page 3

BFU725F-N1 Overview

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.

BFU725F-N1 Key Features

  • Low noise high gain microwave transistor
  • Noise figure (NF) = 0.7 dB at 5.8 GHz
  • High maximum stable gain 27 dB at 1.8 GHz
  • 110 GHz fT silicon germanium technology
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BFU725F-N1 Distributor

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