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BFU768F NPN wideband silicon germanium RF transistor

BFU768F Description

BFU768F NPN wideband silicon germanium RF transistor Rev.1.2 * 24 December 2012 Product data sheet 1.Product profile CAUTION 1.1 Gener.
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

BFU768F Features

* Low noise high linearity RF transistor
* 110 GHz fT silicon germanium technology
* Optimal linearity for low current and high gain
* Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz

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Datasheet Details

Part number
BFU768F
Manufacturer
NXP ↗
File Size
143.55 KB
Datasheet
BFU768F-NXP.pdf
Description
NPN wideband silicon germanium RF transistor

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NPN wideband silicon germanium transistor NXP
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