BFU768F transistor equivalent, npn wideband silicon germanium rf transistor.
* Low noise high linearity RF transistor
* 110 GHz fT silicon germanium technology
* Optimal linearity for low current and high gain
* Low minimum noise f.
in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe pre.
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