Datasheet4U Logo Datasheet4U.com

BFU768F - NPN wideband silicon germanium RF transistor

Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

Features

  • Low noise high linearity RF transistor.
  • 110 GHz fT silicon germanium technology.
  • Optimal linearity for low current and high gain.
  • Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz.
  • Low component count Wi-Fi LNA.

📥 Download Datasheet

Datasheet preview – BFU768F

Datasheet Details

Part number BFU768F
Manufacturer NXP
File Size 143.55 KB
Description NPN wideband silicon germanium RF transistor
Datasheet download datasheet BFU768F Datasheet
Additional preview pages of the BFU768F datasheet.

📁 Similar Datasheet

  • BFU760F - wideband silicon germanium RF transistor (NXP Semiconductors)
  • BFU710F - NPN wideband silicon germanium RF transistor (NXP Semiconductors)
  • BFU725F - NPN wideband silicon germanium RF transistor (NXP Semiconductors)
  • BFU730F - wideband silicon germanium RF transistor (NXP Semiconductors)
  • BFU450C - FILTERS (Murata Electronics)
  • BFU450C4N - FILTERS (Murata Electronics)
  • BFU450K3 - FILTERS (Murata Electronics)
  • BFU580Q - NPN Transistor (INCHANGE)
  • BFU630F - NPN wideband silicon RF transistor (NXP Semiconductors)
  • BFU660F - NPN wideband silicon RF transistor (NXP Semiconductors)
Other Datasheets by NXP
  • BFU725F-N1 - NPN wideband silicon germanium RF transistor
  • BFU730LX - NPN wideband silicon germanium RF transistor
  • BFU790F - NPN wideband silicon germanium RF transistor
  • BFU510 - NPN SiGe wideband transistor
  • BFU520 - NPN wideband silicon RF transistor
  • BFU520A - NPN wideband silicon RF transistor
  • BFU520W - NPN wideband silicon RF transistor
  • BFU520X - NPN wideband silicon RF transistor

Full PDF Text Transcription

Click to expand full text
BFU768F NPN wideband silicon germanium RF transistor Rev. 1.2 — 24 December 2012 Product data sheet 1. Product profile CAUTION 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits  Low noise high linearity RF transistor  110 GHz fT silicon germanium technology  Optimal linearity for low current and high gain  Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.
Published: |