BGF1801-10 Datasheet GSM1800 EDGE power-module

Manufacturer: NXP Semiconductors

BGF1801-10 gsm1800 edge power-module by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	BGF1801-10
Manufacturer	NXP Semiconductors
File Size	123.88 KB
Description	GSM1800 EDGE power-module
Download	BGF1801-10 Download (PDF)

General Description

10 W LDMOS power amplifier module for base station amplifier applications in the 1805 to 1880 MHz band.

QUICK REFERENCE DATA Typical RF performance at Tmb = 25 °C;

ZS = ZL = 50 Ω.

Overview

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1801-10 GSM1800 EDGE power module Product speciﬁcation 2003 Dec 15 Philips Semiconductors Product speciﬁcation GSM1800 EDGE power.

Key Features

Typical GSM EDGE performance at a supply voltage of 26 V:.
Output power = 3.5 W.
Gain = 26.5 dB.
Efficiency = 19%.
ACPR <.
63 dBc at 400 kHz.
rms EVM < 1.2%.
peak EVM < 3.6%.
Low distortion to CDMA signals.
Excellent 2-tone performance.
Low die temperature due to copper flange.
Integrated temperature compensated bias.
50 Ω input/output impedance.
Flat gain over frequency.

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