Description
10 W LDMOS power amplifier module for base station amplifier applications in the 1805 to 1880 MHz band.
DESCRIPTION f (MHz) 1805 to 1880 1805 to 1880 VS (V) 26 26 PL (W) 10 3.5 Gp (dB) 25.5 26.5 η (%) 34 19
Top view 1
BGF1801-10
PINNING - SOT365C PIN 1 2 3 Flange RF input
Features
- Typical GSM EDGE performance at a supply voltage of 26 V:.
- Output power = 3.5 W.
- Gain = 26.5 dB.
- Efficiency = 19%.
- ACPR <.
- 63 dBc at 400 kHz.
- rms EVM < 1.2%.
- peak EVM < 3.6%.
- Low distortion to CDMA signals.
- Excellent 2-tone performance.
- Low die temperature due to copper flange.
- Integrated temperature compensated bias.
- 50 Ω input/output impedance.
- Flat gain over frequency.
BGF1801-10_PhilipsSemiconductors.pdf
