Datasheet4U Logo Datasheet4U.com

BGF1901-10 - GSM1900 EDGE power module

Datasheet Summary

Description

10 W LDMOS power amplifier module for base station amplifier applications in the 1930 to 1990 MHz band.

QUICK REFERENCE DATA Typical RF performance at Tmb = 25 °C; ZS = ZL = 50 Ω.

MODE OF OPERATION CW GSM EDGE Note 1.

Features

  • Typical GSM EDGE performance at a supply voltage of 26 V:.
  • Output power = 3.5 W.
  • Gain = 26.5 dB.
  • Efficiency = 19 %.
  • ACPR <.
  • 63 dBc at 400 kHz.
  • rms EVM < 1.2 %.
  • peak EVM < 3.6 %.
  • Low distortion to a CDMA signal.
  • Excellent 2-tone performance.
  • Low die temperature due to copper flange.
  • Integrated temperature compensated bias.
  • 50 Ω input/output system.
  • Flat gain over frequenc.

📥 Download Datasheet

Datasheet preview – BGF1901-10

Datasheet Details

Part number BGF1901-10
Manufacturer NXP
File Size 123.87 KB
Description GSM1900 EDGE power module
Datasheet download datasheet BGF1901-10 Datasheet
Additional preview pages of the BGF1901-10 datasheet.

📁 Similar Datasheet

  • BGF104 - HSMMC Interface Filter and ESD Protection (Infineon)
  • BGF104C - HSMMC Interface Filter and ESD Protection (Infineon)
  • BGF106 - SIM Card Interface Filter and ESD Protection (Infineon)
  • BGF106C - SIM Card Interface Filter and ESD Protection (Infineon)
  • BGF108 - 7 Channel LCD Filter Array (Infineon)
  • BGF108C - 7 Channel LCD Filter Array (Infineon)
  • BGF108L - 7 Channel LCD Filter Array (Infineon)
  • BGF109 - 10 Channel LCD Filter Array (Infineon)
  • BGF109 - 10 Channel LCD Filter Array (Infineon)
  • BGF109C - 10 Channel LCD Filter Array (Infineon)
Other Datasheets by NXP

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1901-10 GSM1900 EDGE power module Product specification Supersedes data of 2003 Nov 17 2004 Oct 11 Philips Semiconductors Product specification GSM1900 EDGE power module FEATURES • Typical GSM EDGE performance at a supply voltage of 26 V: – Output power = 3.5 W – Gain = 26.5 dB – Efficiency = 19 % – ACPR < −63 dBc at 400 kHz – rms EVM < 1.2 % – peak EVM < 3.6 %. • Low distortion to a CDMA signal • Excellent 2-tone performance • Low die temperature due to copper flange • Integrated temperature compensated bias • 50 Ω input/output system • Flat gain over frequency band.
Published: |