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BGF1901-10 - GSM1900 EDGE power module

General Description

10 W LDMOS power amplifier module for base station amplifier applications in the 1930 to 1990 MHz band.

QUICK REFERENCE DATA Typical RF performance at Tmb = 25 °C; ZS = ZL = 50 Ω.

MODE OF OPERATION CW GSM EDGE Note 1.

Key Features

  • Typical GSM EDGE performance at a supply voltage of 26 V:.
  • Output power = 3.5 W.
  • Gain = 26.5 dB.
  • Efficiency = 19 %.
  • ACPR <.
  • 63 dBc at 400 kHz.
  • rms EVM < 1.2 %.
  • peak EVM < 3.6 %.
  • Low distortion to a CDMA signal.
  • Excellent 2-tone performance.
  • Low die temperature due to copper flange.
  • Integrated temperature compensated bias.
  • 50 Ω input/output system.
  • Flat gain over frequenc.

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1901-10 GSM1900 EDGE power module Product specification Supersedes data of 2003 Nov 17 2004 Oct 11 Philips Semiconductors Product specification GSM1900 EDGE power module FEATURES • Typical GSM EDGE performance at a supply voltage of 26 V: – Output power = 3.5 W – Gain = 26.5 dB – Efficiency = 19 % – ACPR < −63 dBc at 400 kHz – rms EVM < 1.2 % – peak EVM < 3.6 %. • Low distortion to a CDMA signal • Excellent 2-tone performance • Low die temperature due to copper flange • Integrated temperature compensated bias • 50 Ω input/output system • Flat gain over frequency band.