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BGF1901-10 Datasheet

Manufacturer: NXP Semiconductors
BGF1901-10 datasheet preview

Datasheet Details

Part number BGF1901-10
Datasheet BGF1901-10_PhilipsSemiconductors.pdf
File Size 123.87 KB
Manufacturer NXP Semiconductors
Description GSM1900 EDGE power module
BGF1901-10 page 2 BGF1901-10 page 3

BGF1901-10 Overview

10 W LDMOS power amplifier module for base station amplifier applications in the 1930 to 1990 MHz band. QUICK REFERENCE DATA Typical RF performance at Tmb = 25 °C; MODE OF OPERATION CW GSM EDGE Note.

BGF1901-10 Key Features

  • Typical GSM EDGE performance at a supply voltage of 26 V
  • Output power = 3.5 W
  • Gain = 26.5 dB
  • Efficiency = 19 %
  • ACPR < -63 dBc at 400 kHz
  • rms EVM < 1.2 %
  • peak EVM < 3.6 %
  • Low distortion to a CDMA signal
  • Excellent 2-tone performance
  • Low die temperature due to copper flange

BGF1901-10 Applications

  • Base station RF power amplifiers in the 1930 to 1990 MHz frequency range
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