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BGF1801-10 - GSM1800 EDGE power-module

Datasheet Summary

Description

10 W LDMOS power amplifier module for base station amplifier applications in the 1805 to 1880 MHz band.

QUICK REFERENCE DATA Typical RF performance at Tmb = 25 °C; ZS = ZL = 50 Ω.

MODE OF OPERATION CW GSM EDGE Note 1.

Features

  • Typical GSM EDGE performance at a supply voltage of 26 V:.
  • Output power = 3.5 W.
  • Gain = 26.5 dB.
  • Efficiency = 19%.
  • ACPR <.
  • 63 dBc at 400 kHz.
  • rms EVM < 1.2%.
  • peak EVM < 3.6%.
  • Low distortion to CDMA signals.
  • Excellent 2-tone performance.
  • Low die temperature due to copper flange.
  • Integrated temperature compensated bias.
  • 50 Ω input/output impedance.
  • Flat gain over frequency.

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Datasheet Details

Part number BGF1801-10
Manufacturer NXP
File Size 123.88 KB
Description GSM1800 EDGE power-module
Datasheet download datasheet BGF1801-10 Datasheet
Additional preview pages of the BGF1801-10 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1801-10 GSM1800 EDGE power module Product specification 2003 Dec 15 Philips Semiconductors Product specification GSM1800 EDGE power module FEATURES • Typical GSM EDGE performance at a supply voltage of 26 V: – Output power = 3.5 W – Gain = 26.5 dB – Efficiency = 19% – ACPR < −63 dBc at 400 kHz – rms EVM < 1.2% – peak EVM < 3.6%. • Low distortion to CDMA signals • Excellent 2-tone performance • Low die temperature due to copper flange • Integrated temperature compensated bias • 50 Ω input/output impedance • Flat gain over frequency band. APPLICATIONS • Base station RF power amplifiers in the 1805 to 1880 MHz frequency range • GSM, GSM EDGE, multi carrier applications • Macrocell (driver stage) and Microcell (final stage).
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