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BGF844 Datasheet

Manufacturer: NXP Semiconductors
BGF844 datasheet preview

Datasheet Details

Part number BGF844
Datasheet BGF844_PhilipsSemiconductors.pdf
File Size 91.19 KB
Manufacturer NXP Semiconductors
Description GSM800 EDGE power module
BGF844 page 2 BGF844 page 3

BGF844 Overview

23 W LDMOS power amplifier module for base station amplifier applications in the 869 to 894 MHz band. QUICK REFERENCE DATA Typical RF performance at Tmb = 25 °C. MODE OF OPERATION CW GSM EDGE Note.

BGF844 Key Features

  • Typical GSM EDGE performance at a supply voltage of 26 V
  • Output power = 2.5 W
  • Gain = 30 dB
  • Efficiency = 16%
  • ACPR < -65 dBc at 400 kHz
  • rms EVM < 0.4%
  • peak EVM < 1.2%
  • Low distortion to a GSM EDGE signal
  • Excellent 2-tone performance
  • Low die temperature due to copper flange

BGF844 Applications

  • Base station RF power amplifiers in the 869 to 894 MHz frequency range
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