* High power gain
* Easy power control
* Excellent ruggedness
* Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICAT.

* Avionics transmitter applications in the 1030 to 1090 MHz frequency range. DESCRIPTION 2 1 BLA1011-10 PINNING - S.

2 1 BLA1011-10 PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 3 Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is c.

BLA1011-2

BLA1011-200

BLA1011-300

BLA1011S-200

BLA10

BLA1117-1.5

BLA1117-1.8

BLA1117-2.5

BLA1117-2.85

BLA1117-3.3

BLA1117-5.0

BLA1117-ADJ

BLA0912-250