BLC6G10-200 - UHF power LDMOS transistor

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NXP

BLC6G10-200 UHF power LDMOS transistor by NXP - Datasheet Preview — Datasheet preview – BLC6G10-200

Datasheet Details

Part number	BLC6G10-200
Manufacturer	NXP
File Size	89.95 KB
Description	UHF power LDMOS transistor
Datasheet	BLC6G10-200 Datasheet
Additional preview pages of the BLC6G10-200 datasheet.

Product details

Description

200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. 39[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.CAUTION This device is sensitive

Features

I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efﬁciency = 27 % N ACPR =.
39 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use 1.3.

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Published: Jan 31, 2007 |