UHF power LDMOS transistor
Rev. 01 — 19 April 2006
Objective data sheet
1. Product proﬁle
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1: Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
869 to 894
 Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an IDq of 1400 mA:
N Average output power = 40 W
N Power gain = 20 dB
N Efﬁciency = 27 %
N ACPR = −39 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efﬁciency
I Excellent thermal stability
I Designed for broadband operation (800 MHz to 1000 MHz)
I Internally matched for ease of use
I RF power ampliﬁers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 800 MHz to 1000 MHz frequency range.