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BLC6G10LS-160 Datasheet - NXP

UHF power LDMOS transistor

BLC6G10LS-160 Features

* I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 32 V and an IDq of 1200 mA: N Average output power = 32 W N Power gain = 23 dB N Efficiency = 28 % N ACPR =

* 40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High

BLC6G10LS-160 General Description

160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 32 PL(AV) (W) 32 Gp (d.

BLC6G10LS-160 Datasheet (79.96 KB)

Preview of BLC6G10LS-160 PDF

Datasheet Details

Part number:

BLC6G10LS-160

Manufacturer:

NXP ↗

File Size:

79.96 KB

Description:

Uhf power ldmos transistor.
www.DataSheet4U.com BLC6G10-160; BLC6G10LS-160 UHF power LDMOS transistor Rev. 01 12 May 2006 Objective data sheet 1. Product profile 1.1 G.

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BLC6G10LS-160 UHF power LDMOS transistor NXP

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