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BLC6G10LS-200 Datasheet, NXP

BLC6G10LS-200 transistor equivalent, uhf power ldmos transistor.

BLC6G10LS-200 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 89.95KB)

BLC6G10LS-200 Datasheet
BLC6G10LS-200
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 89.95KB)

BLC6G10LS-200 Datasheet

Features and benefits

I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain =.

Application

at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class.

Description

200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f .

Image gallery

BLC6G10LS-200 Page 1 BLC6G10LS-200 Page 2 BLC6G10LS-200 Page 3

TAGS

BLC6G10LS-200
UHF
power
LDMOS
transistor
NXP

Manufacturer


NXP (https://www.nxp.com/)

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