BLC6G10LS-200 Datasheet PDF - NXP UHF power LDMOS transistor Specs

BLC6G10LS-200 - UHF power LDMOS transistor

This page provides the datasheet information for the BLC6G10LS-200, a member of the BLC6G10-200 UHF power LDMOS transistor family.

Datasheet Summary

Description

200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Features

I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efﬁciency = 27 % N ACPR =.
39 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use 1.3.

Datasheet Details

Part number	BLC6G10LS-200
Manufacturer	NXP
File Size	89.95 KB
Description	UHF power LDMOS transistor
Datasheet	BLC6G10LS-200 Datasheet
Additional preview pages of the BLC6G10LS-200 datasheet.

📁 Similar Datasheet

BLC6G20-140 - UHF power LDMOS transistor (Philips)

BLC6G20LS-140 - UHF power LDMOS transistor (Philips)

BLC-015A - Low Pressure Compact Sensors (All Sensors)

BLC-L01D - Low Pressure Compact Sensors (All Sensors)

BLC-L05D - Low Pressure Compact Sensors (All Sensors)

BLC-L10D - Low Pressure Compact Sensors (All Sensors)

BLC-L20D - Low Pressure Compact Sensors (All Sensors)

BLC-L30D - Low Pressure Compact Sensors (All Sensors)

BLC10G18XS-360AVT - Power LDMOS transistor (Ampleon)

BLC10G18XS-400AVT - Power LDMOS transistor (Ampleon)

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product proﬁle 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (%) 27 ACPR (dBc) −39[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.

Published: Jan 31, 2007 |