This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BLC6G10LS-200 |
|---|---|
| Datasheet | BLC6G10LS-200 BLC6G10-200 Datasheet (PDF) |
| File Size | 89.95 KB |
| Manufacturer | NXP Semiconductors |
| Description | UHF power LDMOS transistor |
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200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (%) 27 ACPR (dBc) −39[1] Test signal:.
See all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| BLC6G10LS-160 | UHF power LDMOS transistor |
| BLC6G10-160 | UHF power LDMOS transistor |
| BLC6G10-200 | UHF power LDMOS transistor |
| BLC6G20-110 | UHF power LDMOS transistor |
| BLC6G20-75 | UHF power LDMOS transistor |
| BLC6G20LS-110 | UHF power LDMOS transistor |
| BLC6G20LS-75 | UHF power LDMOS transistor |
| BLC6G22-100 | UHF power LDMOS transistor |
| BLC6G22-130 | UHF power LDMOS transistor |
| BLC6G22LS-100 | UHF power LDMOS transistor |
