BLC6G20-110 - UHF power LDMOS transistor

NXP

BLC6G20-110 Datasheet Preview — Preview of BLC6G20-110 PDF

Datasheet Details

Part number	BLC6G20-110
Manufacturer	NXP ↗
File Size	88.42 KB
Description	UHF power LDMOS transistor
Datasheet	BLC6G20-110_PhilipsSemiconductors.pdf

BLC6G20-110 Product details

Description

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. 60 ACPR600 (dBc) 70 EVM (%) 2.1 IMD3 (dBc) 37 [1] ACPR (dBc) 40 [1] 1930 to 1990 28 1930 to 1990 28 1930 to 1

Features

s Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 25 W (AV) x Gain = 18 dB x Efﬁciency = 32 % x IMD3 =.
37 dBc x ACPR =.
40 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efﬁciency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use www. DataSheet4U. com Philips Semiconductors BL.

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Published: Aug 17, 2007 |