BLC6G20LS-75 Datasheet | NXP Semiconductors

.. BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor Rev. 01 - 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation CW GSM EDGE f (MHz) 1930 to 1990 1930 to 1990 VDS PL(AV) (V) 28 28 (W) 63 29.5 Gp (dB) 19 19 ηD (%) 52 ACPR400 ACPR600 EVMrms (dBc) (dBc) - 72 (%) 1.5 - 62.5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2...